1/10 october 2002 stp3nb90 STP3NB90FP n-channel 900v - 4 w - 3.5 a to-220/to-220fp powermesh? mosfet n typical r ds (on) = 4 w n extremely high dv/dt capability n 100% avalanche tested n gate charge minimized n very low intrinsic capacitances description using the latest high voltage mesh overlay? process, stmicroelectronics has designed an ad- vanced family of power mosfets with outstanding performances. the new patent pending strip layout coupled with the companys proprieraty edge termi- nation structure, gives the lowest r ds(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteris- tics. applications n high current, high speed switching n swith mode power supplies (smps) n dc-ac converters for welding equipment and uninterruptible power supplies and motor drive ordering information type v dss r ds(on) i d pw stp3nb90 STP3NB90FP 900 v 900 v <4.2 w <4.2 w 3.5 a 3.5 a 110 w 35 w sales type marking package packaging stp3nb90 p3nb90 to-220 tube STP3NB90FP p3nb90fp to-220fp tube internal schematic diagram 1 2 3 1 2 3 to-220 to-220fp
stp3nb90 - STP3NB90FP 2/10 absolute maximum ratings (?)pulse width limited by safe operating area (1) i sd 3.5a, di/dt 200 a/ m s, v dd v (br)dss ,tj t jmax (*)limited only by maximum temperature allowed thermal data avalanche characteristics symbol parameter value unit stp3nb90 STP3NB90FP v ds drain-source voltage (v gs =0) 900 v v dgr drain-gate voltage (r gs =20k w ) 900 v v gs gate- source voltage 30 v i d drain current (continuous) at t c = 25c 3.5 3.5 (*) a i d drain current (continuous) at t c = 100c 2.2 1.26 (*) a i dm ( ) drain current (pulsed) 14 14 (*) a p tot total dissipation at t c = 25c 110 30 w derating factor 0.87 0.24 w/c dv/dt (1) peak diode recovery voltage slope 4.5 v/ns v iso insulation withstand voltage (dc) - 2000 v t j t stg operating junction temperature storage temperature C55 to 150 c to-220 to-220fp rthj-case thermal resistance junction-case max 1.14 4.2 c/w rthj-amb t l thermal resistance junction-ambient max maximum lead temperature for soldering purpose 62.5 300 c/w c symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 3.5 a e as single pulse avalanche energy (starting t j = 25 c, i d =i ar ,v dd =50v) 230 mj
3/10 stp3nb90 - STP3NB90FP electrical characteristics (t case = 25 c unless otherwise specified) on/off dynamic switching on switching off source drain diode note: 1. pulsed: pulse duration = 300 s, duty cycle 1.5 %. 2. pulse width limited by safe operating area. symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d =1ma,v gs =0 900 v i dss zero gate voltage drain current (v gs =0) v ds = max rating v ds = max rating, t c = 125 c 1 50 a a i gss gate-body leakage current (v ds =0) v gs = 30v 100 na v gs(th) gate threshold voltage v ds =v gs ,i d = 250 a 345v r ds(on) static drain-source on resistance v gs =10v,i d = 1.7 a 44.2 w symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds =15v;i d = 1.7 a 3s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds =25v,f=1mhz,v gs =0 690 82 8.5 pf pf pf symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v dd =450v,i d = 1.75 a r g = 4.7 w v gs =10v (resistive load see , figure 3) 17 12 ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd =720v,i d = 3.5 a, v gs =10v 22 7.3 9.2 nc nc nc symbol parameter test conditions min. typ. max. unit t d(off) t f turn-off delay time fall time v dd = 450 v, i d = 1.75 a r g =4.7 w v gs =10v (resistive load see , figure 3) 26 39 ns ns t r(voff) t f t c off-voltage rise time fall time cross-over time v dd = 720 v, i d = 3.5 a, r g =4.7 w, v gs =10v (inductive load see , figure 5) 16 20 25 ns ns ns symbol parameter test conditions min. typ. max. unit i sd i sdm (2) source-drain current source-drain current (pulsed) 3.5 14 a a v sd (1) forward on voltage i sd = 3.5 a, v gs =0 1.6 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 3.5 a, di/dt = 100 a/s, v dd =100v,t j =150c (see test circuit, figure 5) 630 3.5 11 ns c a
stp3nb90 - STP3NB90FP 4/10 safe operating area for to-220fp output characteristics safe operating area for to-220 thermal impedance for to-220fp thermal impedance for to-220 transfer characteristics
5/10 stp3nb90 - STP3NB90FP gate charge vs gate-source voltage normalized on resistance vs temperature capacitance variations static drain-source on resistance transconductance normalized gate threshold voltage vs temp.
stp3nb90 - STP3NB90FP 6/10 normalized bvdss vs temperature maximum avalanche energy vs temperature source-drain diode forward characteristics
7/10 stp3nb90 - STP3NB90FP fig. 5: test circuit for inductive load switching and diode recovery times fig. 4: gate charge test circuit fig. 2: unclamped inductive waveform fig. 1: unclamped inductive load test circuit fig. 3: switching times test circuit for resistive load
stp3nb90 - STP3NB90FP 8/10 dim. mm inch min. typ. max. min. typ. max. a 4.40 4.60 0.173 0.181 c 1.23 1.32 0.048 0.051 d 2.40 2.72 0.094 0.107 d1 1.27 0.050 e 0.49 0.70 0.019 0.027 f 0.61 0.88 0.024 0.034 f1 1.14 1.70 0.044 0.067 f2 1.14 1.70 0.044 0.067 g 4.95 5.15 0.194 0.203 g1 2.4 2.7 0.094 0.106 h2 10.0 10.40 0.393 0.409 l2 16.4 0.645 l4 13.0 14.0 0.511 0.551 l5 2.65 2.95 0.104 0.116 l6 15.25 15.75 0.600 0.620 l7 6.2 6.6 0.244 0.260 l9 3.5 3.93 0.137 0.154 dia. 3.75 3.85 0.147 0.151 l6 a c d e d1 f g l7 l2 dia. f1 l5 l4 h2 l9 f2 g1 to-220 mechanical data p011c
9/10 stp3nb90 - STP3NB90FP dim. mm inch min. typ. max. min. typ. max. a 4.4 4.6 0.173 0.181 b 2.5 2.7 0.098 0.106 d 2.5 2.75 0.098 0.108 e 0.45 0.7 0.017 0.027 f 0.75 1 0.030 0.039 f1 1.15 1.7 0.045 0.067 f2 1.15 1.7 0.045 0.067 g 4.95 5.2 0.195 0.204 g1 2.4 2.7 0.094 0.106 h 10 10.4 0.393 0.409 l2 16 0.630 l3 28.6 30.6 1.126 1.204 l4 9.8 10.6 0.385 0.417 l6 15.9 16.4 0.626 0.645 l7 9 9.3 0.354 0.366 ? 3 3.2 0.118 0.126 l2 a b d e h g l6 f l3 g1 123 f2 f1 l7 l4 to-220fp mechanical data
stp3nb90 - STP3NB90FP 10/10 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no res ponsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result f rom its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specificati ons mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devi ces or systems without express written approval of stmicroelectronics. ? the st logo is a registered trademark of stmicroelectronics ? 2002 stmicroelectronics - printed in italy - all rights reserved stmicroelectronics group of companies australia - brazil - canada - china - finland - france - germany - hong kong - india - israel - italy - japan - malaysia - malt a - morocco singapore - spain - sweden - switzerland - united kingdom - united states. ? http://www.st.com
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